Abstract
Hydrogen passivation of silicon dangling bonds is a key requirement in the realization of reliable CMOS devices. The creation of a hydrogen reservoir in the device near the silicon may be a solution supporting constant passivation during the life-cycle of the device. In this work, we used thermal desorption spectroscopy to evaluate the amount of hydrogen stored in undoped silicon glass (USG) deposited using SiH4 (USG-SiH4) or tetraethyl orthosilicate (USG-TEOS), and silicon (carbon) nitrides, typical dielectrics used in CMOS technology. The goal of the study is to determine if these materials can be used as hydrogen source or diffusion barrier. Our results suggest that USG-SiH4 can act as an efficient source of hydrogen, while Si nitrides can act as reliable diffusion barrier.
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