Thermal desorption spectroscopy of he from Ni at and below saturation

Abstract

Abstract Trapping of helium after implantation at energies of 8 to 150 keV and fluences up to 1019 He-ions/cm2 in nickel at room temperature is studied by measuring the thermal desorption spectra during linear heating up to 1000°C. At several annealing stages the trapped helium is measured by means of the nuclear reaction 3He(d, α)H and the target surface is observed by laser scattering and with the scanning electron microscope. The thermal desorption spectra depend strongly on the implantation fluence but only slightly on the implantation energy, indicating a similar trapping of He in the lattice for the implantation energies used here, The temperature at which desorption starts decreases with increasing fluence. Above the critical fluence for blistering an additional low temperature (150°C) desorption maximum is found. The desorption peak at 150°C can be approximated theoretically with a single jump desorption process of first order and a Gaussian distribution of activation energies around 1 eV. The mea...