Abstract
Temperature uniformity of a wafer during post-exposure bake (PEB) in lithography is an important factor in controlling critical dimension (CD) uniformity. In this study, a new hot plate system for the PEB of a 300-mm wafer was analyzed and designed. First, temperature deviation on the wafer caused by warpage was investigated, and the heater pattern of the multi-zone hot plate in the bake system was numerically analyzed. Then, a new heater pattern to enhance the temperature uniformity was proposed and tested experimentally. As a result, temperature uniformity within 0.087 °C on a 300-mm wafer was achieved.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
