Abstract
Silicon-rich oxide (SiO x , 0 4 ) and oxygen as the reactant gasses. The films were annealed at temperatures of 800 °C, 900 °C, 1000 °C and 1100 °C to induce the separation of excess silicon in the SiO x films into nanosized crystalline silicon particles inside an amorphous SiO x matrix. The size of the silicon particles was determined using Raman spectroscopy.
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