Thermal conductivity of ZnO thin film produced by reactive sputtering

Abstract

ZnO thin films have been produced by reactive sputtering with different oxygen contents in the sputtering gas. As a result of transmission electronic microscopy observation, each film consist of two layers: an interfacial layer close to the substrate, with a thickness of about 200 nm, composed of very fine crystal grains and an upper layer above the interfacial layer, composed of column-shaped grains aligned along the out-plane direction. The grain diameter ranges from 35 to 100 nm depending on the oxygen partial pressure. The in-plane and out-plane thermal conductivity have been measured at room temperature. The out-plane thermal conductivity of the interfacial layer is 2.3 W m−1 K−1, independent on the oxygen partial pressure. The out-plane thermal conductivity of the upper layer is 5.4, 7.1, and 4.0 W m−1 K−1, and the in-plane thermal conductivity 4.86, 6.01, and 2.66 W m−1 K−1, for the O2 30%, 60%, and 90% ZnO film, respectively. Both out-plane and in-plane thermal conductivity decrease with the decrease of grain diameter. The thermal conductance of grain boundary has been estimated with the phonon diffusion mismatch model, and the intrinsic thermal conductivity within ZnO grains has been calculated with a cylinder-structured composite model. The result shows that the thermal conductivity of the ZnO thin films is dominated by the intrinsic thermal conductivity, which is a function of grain size.