Thermal Conductivity Model for Nearly Pure and Doped Thin Silicon Layers at High Temperatures

Abstract

Simulation of the temperature field in Silicon-on-insulator (SOI) transistors can benefit from better models and data for thermal conduction in pure and doped semiconducting materials. This work develops simple algebraic expressions to account for the reduction in thermal conductivity due to the size effect and to the presence of dopant impurities. The model applies to temperatures above 300 K and the results are compared with experimental data for pure and doped silicon layers.