Abstract
A new metrological facility devoted to the thermal conductivity measurements up to 1000 °C for thin films (from few tens nanometers to few micrometers thick) deposited on substrate has been recently designed at LNE. Its measurement principle is based on the infrared modulated photothermal radiometry technique (MPTR). This device has been applied to the thermal characterization of industrially relevant chalcogenide thin films (Ge2Sb2Ti5) up to 400 °C. This work, performed in the frame of the European joint research project “Thin Films,” seeks to improve the traceability to the International System of Units (SI) as well as the reliability of this type of measurements at sub-micrometer scale.
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