Abstract
We have developed a novel thermal conductivity measurement technique that is applicable to micro- and nanoscale structures. The methodology integrates a device consisting of two identical microheaters with thin-filmed platinum heating elements and integrated resistance temperature devices (RTDs) on trenched, thermally isolated silicon substrates. The platinum RTDs used for temperature measurement were calibrated by monitoring the melting points of three metallic microspheres placed on the device as its power was increased. We validated our measurement technique by measuring thermal conductivities of several micrometer-sized metallic wire standards with known values. A multiphysical analysis based on a 3D finite element method has been conducted to simulate both the electric and thermal behaviors of the microheaters. These simulations describing the heating and heat flow in the device yield similar temperature profiles near the microheaters obtained in the experimental system.
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