Abstract
The thermal conductivity of single-crystal silicon was investigated by using Raman spectroscopy. The laser simultaneously acted as an excitation source and a heating source. The correlations between Raman spectra with both temperature and laser power for single-crystal silicon, which has a potential relationship with the thermal conductivity, were estimated. The results showed the localized compressive stress caused by laser heating would underestimate Raman peak shift. So, the temperature was determined based on the variation of linewidth. The predicted thermal conductivity of single-crystal silicon is 125 W/m ⋅ K, which is comparable to the theoretical value.
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