Abstract
We directly evaluated thermal conductivity characteristics for the polycrystalline silicon (poly-Si) thin films, in order to clarify the influence of nanostructures in the individual grain. Laser-power dependent Raman spectroscopy showed the temperature increase caused by laser heating. The temperature increase of each sample is different depending on the poly-Si fabrication process. It is considered that this temperature increase is caused by the increase in the phonon scattering inside the grain due to the reduction of the nanostructure sizes in addition to the phonon scattering at the grain boundaries. These results indicate that not only the average grain size but also the nanostructures inside grains should be carefully considered to control thermal conductivities for next-generation poly-Si thin film devices such as thermoelectric device.
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