Thermal Cloaking in Nanoscale Porous Silicon Structure by Molecular Dynamics

Abstract

Nanoscale thermal cloaks have great potential in the thermal protection of microelectronic devices, for example, thermal shielding of thermal components close to the heat source. Researchers have used graphene, crystalline silicon film, and silicon carbide to design a variety of thermal cloaks in different ways. In our previous research, we found that the porous structure has lower thermal conductivity compared to bulk silicon; thus, so we tried to use the porous structure to construct the functional region to control the heat flux. We first calculated the thermal conductivity of crystalline silicon and porous silicon films by means of nonequilibrium molecular dynamics, proving that the porous structure satisfied the conditions for building a thermal cloak. A rectangular cloak with a porous structure was constructed, and a crystalline silicon film was used as a reference to evaluate its performance by the index of the ratio of thermal cloaking. We found that the thermal cloak built with a porous structure could produce an excellent cloaking effect. Lastly, we explain the mechanism of the cloaking phenomenon produced by a porous structure with the help of phonon localization theory. Porous structures have increased porosity compared to bulk silicon and are not conducive to phonon transport, thus producing strong phonon localization and reducing thermal conductivity. Our research expands the construction methods of nanocloaks, expands the application of porous structure materials, and provides a reference for the design of other nanodevices.