Thermal chemical vapor deposition and luminescence property of graphitic carbon nitride film for carbon-based semiconductor systems

Abstract

High-quality graphitic carbon nitride (g-C3N4) films were monolithically grown on various substrate surfaces by thermal chemical vapor deposition. For deposition on both non-crystalline and crystalline surfaces, the crystalline g-C3N4 can be monolithically grown using an amorphous-like buffer layer. The individual atomic bonds and stoichiometric chemical composition were analyzed and found to be close to those of ideal g-C3N4. For a photoluminescence (PL) study, although electron excitation is to the sp3 C–N σ conduction band, preferential electron injection to the sp2 C–N π conduction band was identified from the excitation-power dependence of the PL intensity and PL peak shift.