Abstract
Direct bonded Si-on-SiC is an interesting alternative to silicon-on-insulator (SOI) for improved thermal management in power conversion and radio frequency applications in space. We have used transient thermoreflectance and finite element simulations to characterize the thermal properties of direct bonded Si-on-4H–SiC samples, utilizing a hydrophobic and hydrophilic bonding process. In both instances, the interface has good thermal properties resulting in TBReff values of 6 + 4/−2 m2 K GW−1 (hydrophobic) and 9 + 3/−2 m2 K GW−1 (hydrophilic). Two-dimensional finite element simulations for an equivalent MOSFET showed the significant thermal benefit of using Si-on-SiC over SOI. In these simulations, a MOSFET with a 200 nm thick, 42 μm wide Si drift region was recreated on a SOI structure (2 μm buried oxide) and on the Si-on-SiC material characterized here. At 5 W mm−1 power dissipation, the Si-on-SiC was shown to result in a >60% decrease in temperature rise compared to the SOI structure.
Highlights
Direct bonded Si-on-SiC is an interesting alternative to silicon-on-insulator (SOI) for improved thermal management in power conversion and radio frequency applications in space
The interface has good thermal properties resulting in TBReff values of 6 þ 4/À2 m2 K GWÀ1 and 9 þ 3/À2 m2 K GWÀ1
A MOSFET with a 200 nm thick, 42 lm wide Si drift region was recreated on a SOI structure (2 lm buried oxide) and on the Si-on-SiC material characterized here
Summary
SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p–n diodes Applied Physics Letters 120, 112110 (2022); https://doi.org/10.1063/5.0083032 Applied Physics Letters 2022 60th Anniversary Editorial Applied Physics Letters 120, 110401 (2022); https://doi.org/10.1063/5.0090516 Enhanced light collection from a gallium nitride color center using a near index-matched solid immersion lens Applied Physics Letters 120, 114001 (2022); https://doi.org/10.1063/5.0085257
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