Thermal characterization of direct wafer bonded Si-on-SiC

Abstract

Direct bonded Si-on-SiC is an interesting alternative to silicon-on-insulator (SOI) for improved thermal management in power conversion and radio frequency applications in space. We have used transient thermoreflectance and finite element simulations to characterize the thermal properties of direct bonded Si-on-4H–SiC samples, utilizing a hydrophobic and hydrophilic bonding process. In both instances, the interface has good thermal properties resulting in TBReff values of 6 + 4/−2 m2 K GW−1 (hydrophobic) and 9 + 3/−2 m2 K GW−1 (hydrophilic). Two-dimensional finite element simulations for an equivalent MOSFET showed the significant thermal benefit of using Si-on-SiC over SOI. In these simulations, a MOSFET with a 200 nm thick, 42 μm wide Si drift region was recreated on a SOI structure (2 μm buried oxide) and on the Si-on-SiC material characterized here. At 5 W mm−1 power dissipation, the Si-on-SiC was shown to result in a >60% decrease in temperature rise compared to the SOI structure.