Abstract
Advances in microelectronics technology strongly depend on the thermal optimization of metal/dielectric interfaces, which requires precise modeling and thermal characterization of metal/dielectric structures. This work experimentally investigated the influence of metallic layers on the thermal boundary resistance of silicon nitride dielectric material. The results reveal that the thermal boundary resistance of silicon nitride thin films depends on the metallic layers. The thermal boundary resistance at the interface between Au and SiNx is larger than that between Co0.9Fe0.1 and SiNx. The reasons to cause this difference are discussed with phonon transmission probability and the ratio of the Debye temperature between metals and dielectrics.
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