Abstract
4H‐silicon carbide (SiC) integrated platforms have shown great potential in quantum and nonlinear photonics. However, the thermal properties of 4H‐SiC waveguides are still unknown, even though thermo‐optic effects can play an important role in fundamental measurements and practical applications. Herein, the thermo‐optic effects in a 4H‐SiC microring resonator are comprehensively studied, by means of both temperature tuning and self‐heating. The thermo‐optic coefficient and the ratio between the thermal absorption and the thermal diffusion of 4H‐SiC are quantitatively measured to be and , respectively. Considering the acquired thermal properties, Kerr‐nonlinearity‐based dual‐pump optical parametric oscillation (OPO) is experimentally achieved, and thus, it is demonstrated that broadband solitons can feasibly be generated through thermal tuning of 4H‐SiC‐on‐insulator (SiCOI) microring resonators.
Highlights
Integrated photonics enable on-chip quantum and classical diverse promising color centers and high second- and third-order nonlinearities and is, more interesting within quantum and nonlinear photonics.[7,12,22]signal processing for optical communication with compactThermal properties play an important role in light propagation optical devices and systems.[1,2] Silicon is one of the most widely in optical media
Thermal impact on optical devices can be used materials for integrated photonics, but suffers from strong caused either by changes in the surrounding temperature or two-photon absorption and free-carrier absorption, making the by self-heating due to light absorption in the material, and often material poorly suited for high-power nonlinear applications.[3] leads to mode instabilities
Our results demonstrate the possibility of broadband optical parametric oscillation (OPO) and soliton generation in 4H-silicon carbide (SiC)-on-insulator (SiCOI) microresonators and are meaningful for either improving the thermal stability or taking advantages of thermo-optic effects in the 4H-SiCOI integrated platforms
Summary
Integrated photonics enable on-chip quantum and classical diverse promising color centers and high second- and third-order nonlinearities and is, more interesting within quantum and nonlinear photonics.[7,12,22]. Thermal impact on optical devices can be used materials for integrated photonics, but suffers from strong caused either by changes in the surrounding temperature or two-photon absorption and free-carrier absorption, making the by self-heating due to light absorption in the material, and often material poorly suited for high-power nonlinear applications.[3] leads to mode instabilities. These shortcomings result in an increasing presence of different heat the devices, especially in microring resonators, because integrated platforms with wide bandgap optical materials, such as Si3N4, AlN, LiNbO3, and silicon carbide (SiC).[4,5,6,7] SiC is a mature material that has been widely used in the power the optical power is significantly enhanced inside the cavity. Thermal effects can influence the resonance by altering both the refractive index and the geometric structure;[41] thereby, the variation of resonance versus temperature
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