Abstract
Thermal analysis confirmed the presence of the phase transition at T = 320 K in the Cs2SeO4·H6TeO6 (CsSeTe) material. The structural study carried out at T = 360 K shows that this compound passes from the monoclinic system with the space group \(P2_{1} /c\) at room temperature, to the trigonal system with the space group \(R\bar{3}m\). At room temperature, the anionic groups are well ordered and stable, whereas after the transition at T = 320 K, the selenate groups change their orientation and the tellurate polyhedra change their positions. The high-temperature vibrational studies, carried out in a temperature range of 289–353 K, confirm the presence and nature of the transition detected by thermal analysis. The conductivity evolution versus temperature shows the presence of an ionic–protonic conduction phase transition at T = 490 K.
Highlights
Researchers are interested in the preparation of inorganic materials thanks to their interesting architectures which are related to the structural changes under the effect of various factors such as temperature
We report in this paper the results of the investigation pertaining to the Cs2SeO4.Te(OH)6 (CsSeTe) material, X-ray diffraction and Raman analysis have been undertaken to examine the behavior of the anionic groups and the nature of the phase transition detected by thermal study at T=320K
I - Thermal analysis: The Differential Scanning Calorimetry (DSC) analysis of (CsSeTe) material reported in Figure 3 shows three phase transitions at 320, 530 and 726 K, respectively
Summary
Researchers are interested in the preparation of inorganic materials thanks to their interesting architectures which are related to the structural changes under the effect of various factors such as temperature. We report in this paper the results of the investigation pertaining to the Cs2SeO4.Te(OH)6 (CsSeTe) material, X-ray diffraction and Raman analysis have been undertaken to examine the behavior of the anionic groups and the nature of the phase transition detected by thermal study at T=320K .
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