Thermal behavior analysis of interconnect structures of Si semiconductor devices using the temperature dependent reflectance of an incoherent light beam

Abstract

The amount of light reflected from the light-irradiated device varies depending on the surface temperature at that location. In this paper, we show that, by using an incoherent light beam with a noninvasive wavelength, it is possible to measure the temperature change of the interconnect structure with a size of µm order Si semiconductor devices. As a method of measuring the temperature change, lock-in thermography has been reported. However, it is difficult to measure the temperature change of the fine structure. The spatial resolution of this method is about 10 µm. Here, by using a noninvasive incoherent light beam, the spatial resolution of µm order is achieved. We applied this method to a 4-µm-wide interconnect test element group (TEG) device with a passivation film to observe the temperature change of the interconnect structure.