Abstract
The thermal response of an extreme ultraviolet lithography (EUVL) mask during dry etching was investigated through simulation. In order to estimate the power absorbed during dry etching, the temperature of a glass wafer was measured by observing the change in color of a heat-sensitive label. The experimental result was compared with the simulation result based on a lumped heat capacity model. The absorptance of power was found to be 0.25–0.35, and there was good agreement between the results of the experiment and simulation. To handle mask deflection caused by the temperature gradient, a first-approximation model based on spherical deformation and free boundary conditions was used. The temperature gradient in an EUVL mask that arises during dry etching was analyzed. Thermal deflection of EUVL masks was found to be much less when the masks were formed on an ultralow expansion (ULE) glass substrate or Si substrate rather than on quartz.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
