Thermal atomic layer etching: A review

Abstract

This article reviews the state-of-the art status of thermal atomic layer etching of various materials such as metals, metal oxides, metal nitrides, semiconductors, and their oxides. We outline basic thermodynamic principles and reaction kinetics as they apply to these reactions and draw parallels to thermal etching. Furthermore, a list of all known publications is given organized by the material etched and correlated with the required reactant for each etch process. A model is introduced that describes why in the nonsaturation mode etch anisotropies may occur that can lead to unwanted performance variations in high aspect ratio semiconductor devices due to topological constraints imposed on the delivery of reactants and removal of reactant by-products.