Thermal Annealing of Proton‐Bombarded GaAs and ( Al , Ga ) As

Abstract

A study of the annealing of proton‐bombarded, p‐type and revealed different electrical conductivity recovery effects, depending on the host crystal and the original dopant species and concentration level. It was found that the dopant dependence of the annealing temperatures was in the order . In fact, whereas a Zn‐doped binary system annealed completely at ⩽570°C, Ge‐doped samples, both binary and ternary, did not recover to better than within a factor of five of their original conductivities, even at temperatures as high as 700°C. The Mg‐doped ternaries recovered at ⩽570°C, while equivalently doped binaries acted similarly to the Ge cases in approaching only within a factor of five of their original values at 700°C. The ability to place juxtaposed regions of conducting and nonconducting layers in the “bulk” of a multilayered crystal structure was demonstrated. The potential for three‐dimensional integration in compound semiconductors, utilizing these effects, is discussed.