Abstract
In this study, we report that the thermal treatment effects on the Raman and photoluminescence (PL) spectra of mono and few-layer MoS2 films by annealing in the vacuum and air at 300°C, respectively. The MoS2 film samples were prepared on silicon substrate by exfoliating from a bulk MoS2 crystal with a micromechanical exfoliation. For characterization of structural properties of the MoS2 films and identification of the Raman active modes, Raman spectrometer equipped with a He-Ne laser source and an optical microscope has been used. The results show that the vacuum annealing 7L MoS2 decreases the Full Width at Half Maximum (FWHM) of the Raman active modes as E12g, A1g and the vacuum annealing 1L MoS2 increases the PL intensity and peak energy, for 60% and 13.3meV, respectively also air annealing bilayer MoS2 increased the PL intensity (IA) and peak energy (EA), respectively for 85% and 15.4 meV (300°C for 40 min). After thermal annealing (vacuum and air), we observe that the indirect bandgap of the few-layer MoS2 was changed.
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