Thermal annealing effects on the interface state density of metal-oxide-semiconductor capacitors with electron cyclotron resonance plasma enhanced chemical vapor deposition Silicon dioxide

Abstract

Silicon dioxide films (SiO 2), deposited at room temperature by electron cyclotron resonance (ECR) plasma reactor from a gas phase combination of O 2, SiH 4 and He, present excellent structural and electrical properties. However, when fabricating field effect devices it is also crucial to minimize the defect density at the semiconductor/insulator interface. We show that the interface state density, investigated in Al/SiO 2/Si MOS capacitors, can be substantially reduced performing post-deposition annealing. In particular we studied the effects of annealing temperature and time in different gas ambient: vacuum, nitrogen and forming gas (5% H 2 + N 2). We found that interface state passivation mainly occurs when thermal annealing is performed after Al-contact deposition and that it is quite insensitive to the annealing atmosphere. The present results clearly suggest that the hydrogen passivation mechanism is driven by the H-containing species present in the film and a possible mechanism to explain the results is proposed.