Abstract
We report the thermal annealing effect on the mobility enhancement, the crack development, and the stability of 6,13-bis(triisopropylsilylethynyl) (TIPS)-pentacene field-effect transistors (FETs) with a solution-processed polymeric insulator. A high value of the field-effect mobility (0.401 cm 2 /V s) is achieved by thermally annealing the TIPS-pentacene FET at 60 C which corresponds to the baking temperature of the TIPS-pentacene film. We demonstrate that thermal cracks, resulting primarily from side chains of the TIPS-pentacene, play a critical role on the degradation of the electrical properties of TIPS-pentacene FET, particularly in air under atmospheric pressure. The annealing effect is found to suppress both the development of the cracks and the increase of the off-current with time in the ambient environment. It is suggested that the cracks act as trapping sites of moisture and/or oxygen for the off-current flow and thus deteriorate the electrical performances of the TIPS-pentacene FET.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
