Abstract
Metallorganic Chemical Vapor Deposition should be possible at high oxygen potentials with high deposition rates and with a high throwing power. Therefore, layers can be deposited on tapes and fiber bundles. Two types of reactors: a parallel plate reactor and a stagnation flow reactor were used. The deposition process is activated by a rf-plasma (13.56 MHz) and/or by heating the deposition surface. The gas flow phenomena in the reactor were studied by TiO 2 -fume experiments. The deposition of the single oxides BaO, CuO and Y 2 O 3 is described.
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