Abstract

Two-dimensional (2D) materials have shown promise in various optical and electrical applications. Among these materials, semiconducting transition metal dichalcogenides (TMDs) have been heavily studied recently for their photodetection and thermoelectric properties. The recent progress in fabrication, defect engineering, doping, and heterostructure design has shown vast improvements in response time and sensitivity, which can be applied to both contact-based (thermocouple), and non-contact (photodetector) thermal sensing applications. These improvements have allowed the possibility of cost-effective and tunable thermal sensors for novel applications, such as broadband photodetectors, ultrafast detectors, and high thermoelectric figures of merit. In this review, we summarize the properties arisen in works that focus on the respective qualities of TMD-based photodetectors and thermocouples, with a focus on their optical, electrical, and thermoelectric capabilities for using them in sensing and detection.

Highlights

  • Two-dimensional (2D) materials have been heavily studied over the past two decades since the first synthesis of graphene in 2004 [1]

  • The layered nature of these materials allows layer-dependent properties to be exploited, showing altered optical and electrical properties which can be tailored for specific applications as well as developing heterostructures with multiple materials for enhanced performance. Of these layered materials, semiconducting transition metal dichalcogenides (TMDs) are of the form MX2, which consists of a transition metal M (Mo, W, etc.) sandwiched between two chalcogenide atoms X (S, Se, Te, etc.), with a thickness of less than 1 nm [5]

  • Broadband photodetection is a method of thermal sensing with TMDs as well as many different semiconductor materials for broadband temperatures

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Summary

Introduction

Two-dimensional (2D) materials have been heavily studied over the past two decades since the first synthesis of graphene in 2004 [1]. Recent advances in material science and electronics have given highly sensitive contact and non-contact methods of measuring a verygeneration, wide range and of temperatures [14,15] Applications such as photodetection, thermoelectric transistors [10]. Some TMD optoelectronics offer the capability of measuring someand of Thermal sensing is very important in research, industry, military, and consumer applications the spectral range of these materials of with drastically lower and toxicity while not requiring have been developed for hundreds years. The and expensive to produce and cool [16], and InGaAs lacks wide broadband photodetection tunability, compactness, low-cost, flexibility, and non-toxic nature of many of these materials, some TMD optoelectronics offer the capability of measuring some of the spectral range. Object described in Planck’s law of blackbody radiation, given by the equation [23]:

Non-Contact whereThere
Contact
TMD-Based Photodetectors
Mono- and Few-Layer Photodetectors
Heterostructure
TMD-Based
Current
Challenges and Future Efforts
Findings
Conclusions
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