Abstract
Persistent spectral hole burning (PSHB) within the 7 F 0− 5 D 0 transition of Sm 2+, thermal hole-filling and optical hole-filling with the laser light of different wavelengths, 488, 670 and 688 nm were performed, respectively, at 8 and 200 K in a Sm 2+-doped 10Al 2O⋅90SiO 2 glass prepared by a sol–gel method. The results definitely reveal that the formation of PSHB varies depending on temperature in the glass. Two kinds of formation, optically activated rearrangement of OH bonds surrounding the Sm 2+ ions in addition to one-step electron tunneling, may both contribute to the PSHB at low temperature. On the other hand, only one-step electron tunneling contributes to the PSHB at high temperature.
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