Abstract
The interface reactions in an epitaxial 10nm-thick Fe3O4/MgO(001) film were investigated by using Rutherford Backscattering spectrometry (RBS), channeling (RBS-C) and X-ray reflectometry (XRR). The as-grown film had a good crystallinity indicated by the minimum yield and the half-angle value for Fe, respectively, χmin(Fe)=22% and ψ1/2(Fe)=0.62°. Annealing the films under partial argon pressure up to 600°C led to a large enhancement of Mg out-diffusion into the film forming a wustite-type phase, but the total layer thickness did not change much. Ion irradiation of the film by 1MeV Ar ion beam caused a strong Fe ion mixing resulting in a large interfacial zone with a thickness of 23nm.
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