Thermal and electronic states of exfoliated gC3N4-based nanocomposite with ZrO2 nanoparticles as a robust emissive layer

Abstract

Metal-free graphitic carbon nitride (gC3N4) is proving as a growing star of the carbon nitride family due to its glamorous electrical, optical, and thermal properties. Blending of zirconium oxide (ZrO2) semiconductor with different weight percentages improves the properties of the pure gC3N4. In this work, we used the ultrasonic sound wave method to synthesize gC3N4/ZrO2 nanocomposite. Characterization techniques such as X-ray powder diffraction (XRD), field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HR-TEM), Fourier transforms infrared microscopy (FTIR), UV–visible, and photoluminescence were carried out to characterize the as-synthesized gC3N4, ZrO2, and gC3N4/ZrO2 nanocomposite. The XRD measurement method confirmed the composite's average particle size and crystalline nature. Fourier transform infrared (FTIR) spectroscopy was performed to examine the presence of functional groups in synthesized materials. Bandgap energy of 2.98 eV and light absorbed in the range of 250 nm–450 nm was recorded by UV visible spectroscopy. Photoluminescence spectroscopy revealed photon emission in the range of 450 nm–530 nm of the synthesized materials. Dielectric constant, refractive index (n = 1.5), and electrical conductivity (2.63 × 10−3 S/cm) were computed using an LCR meter and I–V graph. Lower dielectric constant, refractive index, optimized optical band gap energy, and higher electron-hole recombination rate of gC3N4/ZrO2 illustrated a successful emissive layer for organic light-emitting diode applications.