Thermal- and Electromigration- Induced Stresses in Passivated AL- and Alsicu-Interconnects

Abstract

AbstractAl and Al- alloys are commonly used as interconnect materials in integrated electronic devices. Stress induced voiding and degradation of metal lines by electromigration are closely related to the stresses in the lines.We have studied the strain and stress evolution during thermal cycling, isothermal relaxation and due to electromigration in passivated Al and AlSi(l%)Cu(0.5%) lines by X-Ray diffraction with variation of experimental parameters such as the aspect ratio and the electrical current density. Furthermore the extent of voiding and plastic shear deformation has been determined from the experimental metal strains with the help of finite element calculations.Main results are: 1) During thermal cycling the voiding is less than 2 ·10−3. The extent of plastic shear deformation increases with increasing line width and with decreasing flowstress. 2) During isothermal relaxation void growth occurs but no significant change in the plastic shear deformation. 3) An electric current in the lines causes no measurable additional change of the volume averaged stresses up to line failure.