Thermal and electrical transport property study of direct vapour transport grown Cu2SnS3 single crystals

Abstract

Copper tin sulphide (Cu2SnS3) (CTS) single crystals are grown by vapour transport technique of direct (DVT) type. The stoichiometric compositional analysis; Cu: 40.78 % (37.21 %), Sn: 31.09 % (34.35 %) and S: 28.13 % (28.15 %); showed the crystals to be slightly copper rich and tin deficient, bracket values are standard data. The X-ray diffraction showed the CTS to possess cubic unit structure having lattice parameter of 5.43 Å. The high resolution transmission electron microscopy substantiated the crystalline character. The thermal analysis are carried out by recording simultaneous thermogravimetric, differential thermogravimetric and differential thermal analysis curves. These analysis are done in inert atmosphere for three heating rates of 10, 15 and 20 K⋅min−1 in the range from ambient to 1023 K. The thermocurves are analyzed by two standard methods of Kissinger-Akahira-Sunose (KAS) and Flynn-Wall-Ozawa (FWO). The thermodynamic parameters like activation energy, changes of entropy, enthalphy and Gibbs free energy are determined using KAS and FWO methods. These determined thermodynamic parameters of as-grown CTS single crystals matches each other stating the validity of the analysis. Temperature variation of electrical transport properties like dc electrical resistivity (ρ) and Seebeck coefficient (S) are measured in the temperature range of 323 K to 473 K. The values of ‘ρ’ decreases with temperature, stating semiconducting nature of crystals. The observed ‘S’ values are found to be positive in entire temperature range, stating crystals to be of p-type semiconducting nature.