Abstract
The analytical results and design considerations for a cryogenically cooled advanced photon source (APS) silicon monochromator are presented. The high conductivity and low thermal expansion coefficient of silicon at cryogenic temperatures are advantages that are used to solve the high-heat-flux problem from undulator radiation. The APS monochromator features a machined slot with variable thicknesses below the surface. This configuration is designed to reduce absorption by the crystal and decrease the maximum temperature of the crystal. The transmitted power through the crystal is absorbed by a second element that can be cooled by standard cooling techniques. Different parameters and configurations are analyzed to maximize the performance of the monochromator and minimize the total absorbed power by the crystal.
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