Abstract
ABSTRACTThe thermal and chemical stability of thin CVD iridium films deposited on thin CVD tantalum pentoxide (Ta2O5) films on Si(100) have been investigated by means of in-situ X-ray Photoelectron Spectroscopy (XPS) and ex-situ Angle Resolved XPS (ARXPS). It was found that upon annealing in vacuum at 800 °C for more than 1 min, tantalum oxide at the Ir-Ta2O5 interface was decomposed and formed metallic tantalum which diffused through Ir, while changes in iridium film itself were negligible. When annealed at 750 °C within 15 minutes, intermediate partially oxidized Ta was formed and coexisted with metallic and oxidized Ta. A portion of metallic Ta near Ir-vacuum interface was subsequently oxidized when the films were exposed in air.
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