Abstract
Press-pack insulated gate bipolar transistor (PP IGBT) is the key component in hybrid direct current circuit breaker (DCCB), due to its fast-breaking speed and large interruption capacity. This paper presents the transient behavior of PP IGBT under rated and fault current interruption conditions. For the purpose of evaluation for thermal behavior of PP IGBT, the power losses under different interruption conditions are analyzed, then the cauer model and FEM model are built based on a 4500V/115A press-pack IGBT for junction temperature estimation. Consequently, analytical investigation in conjunction with cauer thermal network model and FEM simulation demonstrate the thermal behavior of PP IGBT under different DC interruption conditions.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
