Thermal analysis of incandescent lamp zone-melting recrystallization of thin silicon films

Abstract

A two-dimensional numerical simulation of incandescent lamp zone-melting recrystallization was developed to investigate the critical thermal processing parameters. Parametric studies examined the thermal effects of lamp intensity profile, susceptor emissive power, and the ambient reflectivity of the system, on the melt zone. Results, presented in graphical form, indicate that the melt width increases nonlinearly with peak intensity due to an increase in reflectivity of silicon upon melting. Melt width increases linearly with susceptor emissive power due to an increase in emissive-dominated effects. Moreover, the ambient reflectivity of the system (often overlooked in thermal analyses) is found to have a significant effect on the process.