Abstract
AbstractThis paper reports on the thermal behavior of GaN‐based laser diode (LD) package as functions of cool‐ing systems, die attaching materials, and chip loading conditions. Thermal resistance and junction tem‐perature was determined by electrical‐thermal transient method. Significant change of thermal resistance with input current was observed under natural cooling condition due to the sensitive change of heat trans‐fer coefficient (h ) with temperature. Employment of PbSn as a die attachment was more advantageous over Ag‐paste in thermal behavior of LD package. Compare the thermal resistance of LD packages epi‐down and epi‐up structures. The partial thermal resistance from junction to submount is 4.68 K/W for epi‐down structure, and 9.65 K/W to epi‐up structure. The results demonstrate that the total thermal resistance of LD package be controlled mainly by the packaging design rather than the chip structure itself. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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