Thermal Analysis and Test Condition Definition of Power cycling Tests for a 6-in-1 Double Side Cooling SiC Power Module

Abstract

Silicon Carbide (SiC) based power modules are widely used in the 5G communications, electric vehicle, aerospace, marine, energy and other industrial fields. Different from the consumer electronics application, automotive grade SiC power devices are operation with higher junction temperature, higher power density, higher switching frequency, and harsher environment, the reliability of the power module is particularly important. Power cycling testing is one of the critical tests used for the reliability assessment of the power semiconductor devices and power module development. Power cycling test periodically applies a current to the devices integrated in the power module. This leads to power loss in the entire module and results in a rise in the temperature of the power devices, as well the ununiformed temperature distribution in the power module. In this paper, thermal analysis is conducted for a 6-in-1 double side cooling SiC power module. The temperature distribution of the power module is simulated and the junction temperature of the SiC power devices in the power module is analyzed. The junction temperature difference under different power cycling test conditions is evaluated, and final test condition of the power cycling test for the developed 6-in-1 power module is proposed.