Abstract
The thermal activation energy of an impurity in a semiconductor is of fundamental interest both from the point of view of applications and of basic physics. Its value, as deduced from the Hall effect data, depends on the concentration of impurity centers as well as the compensation degree. Various theoretical models have been proposed in the literature to account for this effect. Results of the Hall effect measurements on strongly compensated p- type GaSb were compared with the predictions of the available theoretical models. It was found that among the models considered, the model based on the concept of macroscopic potential fluctuations gives the best quantitative agreement with the experimental data.
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