Theory on the optical-phonon Raman scattering in GaAs/AlAs heterostructures

Abstract

A microscopic theory of Raman scattering by optical phonons in GaAs/GaAlAs heterostructures is worked out systematically, on the basis of recent advances in our knowledge of the electronic structure and the optical-phonon modes in superlattices and quantum wells. Theories have shown that specific features of the intermediate states are of special importance for a quantitative theory. Thus, the heavy and light hole mixing effect, and the angular momentum state of the four-component excitons, can play a decisive role in determining the predominant scattering channels. Special attention has been paid to the Frolich-interaction induced scattering, which is dipole forbidden in bulk materials but allowed in multiple quantum wells owing to the barrier penetration and the hole mixing. Based on the microscopic theory, explanations are provided for such experimental facts as the asymmetry between the incoming and the outgoing resonance, the line shape of Raman spectra and the features of two-phonon Raman scattering in quantum well systems.