Abstract
The method developed by one of the authors is generalized to include paramagnetic impurities in order to explain zero bias tunneling anomalies. The self-energy of the electrons is supposed to be a local function in space; nonlocal or assisted tunneling effects are beyond the scope of the present theory. The tunneling current is expressed in terms of the local density of states at the barrier which in turn is given in terms of the life-time of the conduction electrons. The change of the local density of states depends on the positions of the impurities relative to the metal-oxide interface. This dependence is thoroughly investigated.
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