Abstract
We investigate the suitability of Si 1−yCy for n -channel electronic devices by calculating the band offsets of Si1−y C ylayers grown on silicon. A reformulated tight binding method with measured spectroscopic term values is employed for calculation of valence band offsets. Calculation of conduction band offsets gives 6.8y(eV) in good agreement with MOSC-V measurements of 6.5y(eV). We find CBO : VBO to be −7 : 3 for low carbon concentrations.
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