Abstract
The spectral acoustic phonon emission intensity of the hot quasi two-dimensional electron gas (2DEG) in quantized n-Si (GaAs) inversion layers is calculated as a function of the phonon angular frequency w at different values of the carrier temperature Te and density Ns. In the long wave length limit (ℏw ⪡ kBTe) the emission intensity increases ∝ ws(ws+1) for bulk- (surface-) modes where s = 3 for the unscreened acoustic deformation potential coupling. At w ≈ vj2kF (vj: sound velocity of the phonon mode j, kF: radius of the Fermi-circle) the emission intensity reaches a maximum whose position is shifted to higher w-values if Ns increases. For given values of Ns, Te, T (lattice temperature) and ϑ (emission angle) the emission intensity maximum of the n-GaAs inversion layer is found to be about one order of magnitude smaller than the intensity maximum of the n-Si inversion layer.
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