Abstract
This theory examines the effect of the screened Coulomb field generated by impurity ions on various semiconductor phenomena. The exact equation for the screening length, which is derived for semiconductors, is a function of temperature, doping density and intrinsic carrier density. In silicon the screening length varies from a fraction of a nanometer to thousands of nanometers depending on the temperature and the doping density. The overlap of these impurity fields causes both crystal potential shift and repulsion among impurity ions. The repulsion among the impurity ions gives rise to a pressure build-up, which is attributed to such phenomena as solid solubility and diffusion-induced defect generation. The experimental solubilities of lithium in germanium, and boron, phosphorus, and arsenic in silicon are compared with the theoretical values. Also, the optically enhanced solubility during rapid thermal processing is explained.
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