Abstract
The excitation of the non-steady-state photoelectromotive force is considered for the model of semiconductor with two impurity levels from which photocarriers are generated. The general expressions for complex amplitudes of photocurrent and electric field are obtained. We analyze the dependencies of photoelectromotive force signal amplitude on temporal and spatial frequencies for the sillenite-type crystals and present a possible way for determination of real photoelectric parameters (the lifetime of carriers, their mobility, and average diffusion length).
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