Abstract
A nonlinear theory is developed to predict the gain of a distributed vacuum amplifier employed with field-emitter arrays. Contrary to conventional expectation, it is shown that density modulation of the electrons in the emitting structure is limited by high resistive losses and electronic damping. Therefore, a modified schematic is suggested with the high-frequency modulator separated from the emitter that only dc bias voltage is applied to. Small-signal calculation shows that 15–25dB gain (with 3dB bandwidth over 200GHz) at 100–400GHz frequency band can be obtained within 1–2cm drift space length with currently available parameters of field emitters and microstrip transmission lines. Nonlinear calculations predict promising performances of good linearity and 13–20dBm saturated output power. The suggested distributed vacuum amplifier fully based on microelectromechanical systems technologies would open a new era for the devices operating at the border of millimeter and submillimeter bands.
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