Abstract
The Raman scattering cross section in the forward direction has been calculated for narrow-gap semiconductors such as GaAs, GaP, etc. The main mechanism considered for the scattering is the "phonon fluctuations," while the negligible contribution to the scattering from electron-charge fluctuations has been omitted. Our result shows the possibility of observing ionic as well as electronic excitation modes resulting from the self-consistent field of the electron-phonon system.
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