Abstract
Deep donor levels which are referred to as the DX centers are calculated using the scattering-theoretic method in Al x Ga 1- x As, GaAs 1- y P y and Al x Ga 1- x Sb semiconductors, and also GaAs-AlAs and GaSb-AlSb (001) superlattices. The calculated results show that the deep levels attributable to the DX centers are incluced by the central cell potential of substitutional donors. The theory quantitatively explains experimental results on the DX centers in III-V semiconductors and superlattices.
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