Theory of the ⟨100⟩ uniaxial stress dependence of the deep levels in GaP and GaAs

Abstract

We extend previous theoretical work to predict the derivatives with respect to the ⟨100⟩ uniaxial stress of the substitutional deep point defect energy levels in GaP and GaAs which, for a defect at a specific site producing a level of particular symmetry, can be evaluated as a function of their energy levels in the band gap.