Abstract
Liquidus-solidus phase paradigms of III–V semiconductors are calculated using the Cluster Variation Method and related techniques developed recently. The liquid phase is treated assuming a lattice model. An equilibrium state is derived by minimizing the grand potential ( G ̂ ), keeping the chemical potential fixed. The resulting nonlinear equations are solved using the Natural Iteration Method which has a property that the value of G ̂ always decreases at each iteration cycle. The phase boundary is derived from an intersection of two G ̂ curves; the correct forms of G ̂ values to be used are derived from geometrical considerations. Ternary phase diagrams calculated for InGaAs and InSbAs agree well with previous calculations of Stringfellow and Greene and with experimental data. For ternary cases, a tie line connecting coexisting liquid and solid phases are proved to be orthogonal to the phase boundary curve in the chemical potential diagram.
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