Abstract
General analytical theory of stationary impact-ionization plane waves in semiconductor devices with arbitrary electric-field dependence of drift velocities and impact-ionization coefficients of electrons and holes is developed. The formulas are obtained that describe the structure of the wave front and make it possible to calculate its main parameters (velocity, width, maximum electric field, concentration of charge carriers, and electric field behind the front) for given values of current density and doping level of the semiconductor. Limitations of the theory resulting from the disregard of the diffusion current and continuum approximation are considered.
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