Abstract
We develop a fully quantum-mechanical theory for the interaction of light andelectron–hole excitations in semiconductor quantum dots. Our theoretical analysis resultsin an expression for the photoluminescence intensity of quantum dots in the linear regime.Taking into account the single-particle Hamiltonian, the free-photon Hamiltonian, theelectron–hole interaction Hamiltonian, and the interaction of carriers with light, andapplying the Heisenberg equation of motion to the photon number expectation values, tothe carrier distribution functions and to the correlation term between the photongeneration (destruction) and electron–hole pair, we obtain a set of luminescence equations.Under quasi-equilibrium conditions, these equations become a closed-set of equations. Wesolve them analytically, in the linear regime, and we find an approximate solution of theincoherent photoluminescence intensity. The validity of the theoretical analysisis tested by investigating the emission spectra in the high-temperature regime,interpreting the experimental findings for the emission spectra of a lens-shapedIn0.5Ga0.5As self-assembled quantum dot. Our theoretical predictions for the interlevel spacing as well asfor the dephasing time caused by electron–longitudinal optical phonon interactions are ingood agreement with the experimental results.
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